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PD-97178
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22 IRHLG73110 300K Rads (Si) 0.22 ID 1.8A 1.8A
2N7612M1 IRHLG77110 100V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25C ID @ VGS = 4.5V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.8 1.1 7.2 1.4 0.01 10 97 1.8 0.14 11 -55 to 150
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns
oC
300 (0.063in/1.6mm from case for 10s) 1.3 (Typical)
g
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1
03/20/08
IRHLG77110, 2N7612M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25C (Unless Otherwise specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 1.0 -- 3.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -4.4 -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.22 2.0 -- -- 1.0 10 100 -100 15 2.5 6.0 15 20 65 25 -- V V/C V mV/C S A nA nC
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 1.1A VDS = VGS, ID = 250A VDS = 10V, IDS = 1.1A A VDS= 80V ,VGS= 0V VDS = 80V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.8A VDS = 50V VDD = 50V, ID = 1.8A, VGS = 4.5V, RG = 7.5 A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
653 119 2.7 16
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.8 7.2 1.2 100 223
Test Conditions
A
V ns nC Tj = 25C, IS = 1.8A, VGS = 0V A Tj = 25C, IF = 1.8A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 90
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA (Per Die)
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036AB) Diode Forward Voltage Up to 300K Rads (Si)1
Min
100 1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS= 80V, VGS=0V VGS = 4.5V, ID = 1.1A VGS = 4.5V, ID = 1.1A VGS = 0V, ID = 1.8A
-- 2.0 100 -100 10 0.25 0.22 1.2
1. Part numbers IRHLG77110, IRHLG73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET
(MeV/(mg/cm2)) Br I Au 37 60 84
Energy
(MeV) 305 370 390
Range
(m) 39 34 30 0V 100 100 100 -1V 100 100 100 -2V 100 100 100 -4V 100 100 100
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-5V 100 100 100
-6V 100 100 -
-7V 100 -
-8V 100 -
120 100 80 60 40 20 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8
Br I Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHLG77110, 2N7612M1
Pre-Irradiation
10
VGS TOP 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V
10
VGS 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
2.0V 1
1 2.0V
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10 T J = 150C
ID, Drain-to-Source Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.8A
2.0
T J = 25C 1
1.5
1.0
0.5
0.1 2 2.2 2.4
VDS = 50V 15 60s PULSE WIDTH 2.6 2.8 3
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLG77110, 2N7612M1
ID = 1.8A 0.4
RDS(on), Drain-to -Source On Resistance ( )
RDS(on), Drain-to -Source On Resistance ()
0.5
0.4 0.35 T J = 150C 0.3 0.25 0.2 0.15 Vgs = 4.5V 0.1 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 ID, Drain Current (A) T J = 25C
0.3
T J = 150C
0.2
T J = 25C
0.1 0 1 2 3 4 5 6 7 8 9 10 11
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
130
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
120
1.5
1.0
110
0.5
ID = 50A ID = 250A ID = 1.0mA ID = 150mA
100 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHLG77110, 2N7612M1
Pre-Irradiation
1600 1400 1200
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
12 ID = 1.8A 10 8 6 4 2 0 VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
1000 800 600 400 200 0 1 10 100
Ciss Coss
Crss
FOR TEST CIRCUIT SEE FIGURE 17 0 4 8 12 16 20 24
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
10
2
ISD, Reverse Drain Current (A)
1 T J = 150C
ID, Drain Current (A)
1.4 1.6
1.5
1
0.1
T J = 25C
0.5
VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 11. Typical Source-to-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHLG77110, 2N7612M1
100
EAS , Single Pulse Avalanche Energy (mJ)
240
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 10
200
TOP BOTTOM
ID 0.8A 1.1A 1.8A
160
120
1 Tc = 25C Tj = 150C Single Pulse 1 10
1ms
80
10ms
40
0.1
0
100
1000
25
50
75
100
125
150
VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
1000
Thermal Response ( Z thJA )
100
D = 0.50
10
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
1
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRHLG77110, 2N7612M1
Pre-Irradiation
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
VGS 20V
. D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 16a. Unclamped Inductive Test Circuit
4.5V
QG
12V
50K .2F .3F
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
Fig 17a. Basic Gate Charge Waveform VDS V GS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
IG
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
VDS 90%
RD
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLG77110, 2N7612M1
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 6.6mH Peak IL = 1.8A, VGS = 10V A ISD 1.8A, di/dt 497A/s, VDD 100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008
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